Metal/dielectric ultra-wideband absorbing film and production method thereof
The invention relates to a metal/dielectric ultra-wideband absorbing film. The metal/dielectric ultra-wideband absorbing film comprises a substrate, a first film and a second film which are sequentially disposed from bottom to top, the first film (2) is a metal/dielectric film stack formed by altern...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a metal/dielectric ultra-wideband absorbing film. The metal/dielectric ultra-wideband absorbing film comprises a substrate, a first film and a second film which are sequentially disposed from bottom to top, the first film (2) is a metal/dielectric film stack formed by alternately arranging low-refractive index dielectric films L and high-absorption metal films H, and one side, in contact with the substrate, of the first film is the low-refractive index dielectric film L, and the second film is a single-layer low-refractive index dielectric antireflection film AR. Compared with the prior art, the method omits a traditional thick-layer precious metal substrate, increases the adhesion and the firmness between the film and the substrate, adopts a novel material selection process, realizes an absorption bandwidth of about 7 [mu]m at 400-7000 nm, and makes the obtained film have an average absorption rate of above 92%.
本发明涉及种金属/介质超宽带吸收薄膜及其制备方法,所述金属/介质超宽带吸收薄膜包括由下而上依次设置的基板、第薄膜和第二薄膜,所述第薄膜(2)为由 |
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