VARIABLE SPACE MANDREL CUT FOR SELF ALIGNED DOUBLE PATTERNING

The present disclosure relates to semiconductor structures and, more particularly, to variable space mandrel cut for self-aligned double patterning and methods of manufacture. The method includes: forming a plurality of mandrels on a substrate; forming spacers about the plurality of mandrels and exp...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JIN PING LIU, JIEHUI SHU, BYOUNG YOUP KIM
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The present disclosure relates to semiconductor structures and, more particularly, to variable space mandrel cut for self-aligned double patterning and methods of manufacture. The method includes: forming a plurality of mandrels on a substrate; forming spacers about the plurality of mandrels and exposed portions of the substrate; removing a portion of at least one of the plurality of mandrels to form an opening; and filling in the opening with material. 本发明涉及自对准双重图型化用的可变空间心轴切割,其关于半导体结构,并且更尤指自对准双图型化用的可变空间心轴切口及制造方法。该方法包括:在衬底上形成多个心轴;在该多个心轴及该衬底的已曝露部分附近形成间隔物;移除该多个心轴的其中至少者的部分以形成开口;以及以材料在该开口中进行填充。