Physical-base large-signal modeling method and system for microwave gallium nitride devices

The invention discloses a physical-base large-signal modeling method and system for microwave gallium nitride devices. The method includes the steps of obtaining test result data of each gallium nitride device on the same processing line under different input powers; calculating the mean value of the test result data under each input power; based on the mean value, building a physical-base large-signal model, setting physical parameters as nominal values, and then obtaining the initial values of fitting parameters; selecting devices corresponding to an upper edge curve and a lower edge curve;building physical-base large-signal models of a upper edge device and a lower edge device; substituting the fitting parameters into the physical-base large-signal models of the two edge devices, adjusting the fitting parameters and the physical parameters to ensure that the two models share the same set of fitting parameters and use different physical parameters, and therefore determining the fitting parameters and physic