Silicon thin film material stress detection system

The invention relates to the technical field of photoelectric detection and especially relates to a silicon thin film material stress detection system. The system comprises a laser, a polarization beam splitter, a quarter wave plate, a half wave plate and a stress application device, which are arranged in sequence in the Z-axis direction. The system also comprises a reflected light detector for receiving reflected light of the polarization beam splitter and converting the reflected light into an electrical signal, an analog phase-locked amplifier connected with the reflected light detector, and a low-frequency signal generator for applying a modulated field to a sample and meanwhile, is connected with the analog phase-locked amplifier. The stress application device comprises a positioningdisc, a metal fixation rod and a stress application rod. The system realizes the purpose of comprehensive detection of silicon material stress through a three-point method or a four-point method and the like based on the char