Monocrystalline semiconductor wafer and method for producing semiconductor wafer

The invention relates to a monocrystalline semiconductor wafer having an average roughness Ra of at most 0.8 nm at a cut-off wavelength of 250 [mu]m. The wafer is characterized by an ESFQRavg of 8 nmor less at an edge exclusion of 1 mm. The invention further relates to a method for producing a monocrystalline semiconductor wafer. The method comprises the following steps in the specified order: polishing the semiconductor wafer on both sides simultaneously; locally processing at least part of at least one side of the semiconductor wafer in a material-removing manner by means of a liquid jet, which contains suspended hard-material particles and which is directed at a small area of the surface by means of a nozzle, wherein the nozzle is moved over the part of the surface to be treated in such a way that a predefined geometry parameter of the semiconductor wafer is improved; and polishing the at least one surface of the semiconductor wafer. 本发明涉及种单晶半导体晶片，其在250微米的截止波长下平均粗糙度R最大为0.8纳米，其特征在于，假设边缘排除1毫米，则ESFQR为8纳米或更小。本