Strain NMOSFET based on encapsulating strain technology

The invention discloses a strain NMOSFET based on an encapsulating strain technology, and belongs to a semiconductor technology. The strain NMOSFET comprises a semiconductor substrate 1, and a source,a drain and a grid 3 which are located on the semiconductor substrate 1. A grid oxidizing layer 2 is arranged between the grid 3 and the semiconductor substrate 1. A channel area 8 is formed in the area, below and near the grid oxidizing layer 2, in the semiconductor substrate 1. Through the encapsulating strain technology, the strain parallel to the direction of source and drain currents of thestrain NMOSFET is formed in the channel area 8 in the strain NMOSFET; a groove type structure 9 is arranged on the semiconductor substrate 1, located outside the area, parallel to the direction of thesource and drain currents of the strain NMOSFET, outside the grid 3 and used for enhancing the strain in the channel area 8. The strain NMOSFET has a strain enhancing effect, the larger strain parallel to a NMOSFET channel can