Preparation method of semiconductor chip protective layer and semiconductor chip

The present invention is suitable for the technical field of semiconductors, and provides a preparation method of a semiconductor chip protective layer and a semiconductor chip. The method comprises the steps of: forming a first SiN layer at an upper surface of a first area of a semiconductor chip, wherein the first area comprises an area except a pressure point, or the first area comprises an area except the pressure point and an edge area of the pressure point; forming an organic polymer layer at the upper surface of the first SiN layer; forming a second SiN layer at the upper surface and the side wall of the organic polymer layer, wherein the first SiN layer and the second SiN layer completely wrap the organic polymer layer. The preparation method of the semiconductor chip protective layer and the semiconductor chip can significantly improve the moisture resisting performance of the semiconductor chip. 本发明适用于半导体技术领域，提供了种半导体芯片保护层的制备方法和半导体芯片，该方法包括：在半导体芯片第区域的上表面形成第SiN层；其中，所述第区域包括压点之外的区域，或所述第区域包括所述压点之外的区域和所述压点