Low-voltage margin linear region current mirror
The invention provides a low-voltage margin linear region current mirror. The low-voltage margin linear region current mirror comprises a first MOS (Metal Oxide Semiconductor) pipe, a second MOS pipeand an operational amplifier, wherein a grid electrode of the first MOS pipe and a grid electrode of...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention provides a low-voltage margin linear region current mirror. The low-voltage margin linear region current mirror comprises a first MOS (Metal Oxide Semiconductor) pipe, a second MOS pipeand an operational amplifier, wherein a grid electrode of the first MOS pipe and a grid electrode of the second MOS pipe are respectively connected with an output end of the operational amplifier, a source electrode of the first MOS pipe and a source electrode of the second MOS pipe are respectively grounded, a positive electrode input end of the operational amplifier is connected with a drain electrode and a current input end of the first MOS pipe to form a regenerative feedback loop; a negative electrode input end of the operational amplifier is connected with a drain electrode and a currentoutput end of the second MOS pipe to form a negative feedback loop; wherein the electric potential of the drain electrode of the first MOS pipe and the electric potential of the drain electrode of the second MOS pipe are the |
---|