Low-voltage margin linear region current mirror

The invention provides a low-voltage margin linear region current mirror. The low-voltage margin linear region current mirror comprises a first MOS (Metal Oxide Semiconductor) pipe, a second MOS pipeand an operational amplifier, wherein a grid electrode of the first MOS pipe and a grid electrode of...

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Bibliographische Detailangaben
1. Verfasser: YANG ZHONGPAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides a low-voltage margin linear region current mirror. The low-voltage margin linear region current mirror comprises a first MOS (Metal Oxide Semiconductor) pipe, a second MOS pipeand an operational amplifier, wherein a grid electrode of the first MOS pipe and a grid electrode of the second MOS pipe are respectively connected with an output end of the operational amplifier, a source electrode of the first MOS pipe and a source electrode of the second MOS pipe are respectively grounded, a positive electrode input end of the operational amplifier is connected with a drain electrode and a current input end of the first MOS pipe to form a regenerative feedback loop; a negative electrode input end of the operational amplifier is connected with a drain electrode and a currentoutput end of the second MOS pipe to form a negative feedback loop; wherein the electric potential of the drain electrode of the first MOS pipe and the electric potential of the drain electrode of the second MOS pipe are the