Edge-Coupled Semiconductor Photodetector

The application relates to an edge-coupled semiconductor photodetector. A device is disclosed for monitoring power from a laser diode. The device includes a substrate having a top surface and a firstfacet perpendicular to the top surface through which light enters the substrate. The device further includes a second facet onto which light that has entered the substrate through the first facet along an optical axis that is non-normal to the first facet is incident. The device further includes a photodiode fabricated on the top surface of the substrate for measuring an intensity of the light that enters the first facet of the substrate along the optical axis that is non-normal to the first facet. The light that has entered the substrate through the first facet along the optical axis that isnon-normal to the first facet is reflected by the second facet toward a photoactive region of the photodiode. 本申请涉及边缘耦合的半导体光电探测器。公开了种用于监测来自激光二极管的功率的器件。该器件包括具有顶表面和与顶表面垂直的第面的基板，其中，光通过第面进入基板。该器件还包括第二面，沿与第面非正交的光轴通过第面进入基板的光入射到第二面上。