Preparation method for Si-based yttrium iron garnet film

The invention discloses a preparation method for a Si-based yttrium iron garnet film, and particularly relates to a preparation method for the yttrium iron garnet film based on sol-gel. The preparation method includes the steps that (1) yttria and ferric nitrate are dissolved in mixed solvents composed of nitric acid, water and citric acid to obtain a mixed solution; (2) the mixed solution is stirred to reach the concentration of 0.15-0.2 mol/L; (3) yttrium iron garnet precursors are dropwise added to a substrate to form a gel film; (4) the gel film is subjected to pre-annealing treatment to form a seed crystal layer; (6) a layer of precursor solution is further dropwise added to the seed crystal layer; and (7) post-annealing treatment is conducted. 本发明公开了种Si基钇铁石榴石薄膜的制备方法，具体涉及种基于溶胶凝胶钇铁石榴石薄膜的制备方法。所述方法包括：1)将氧化钇和硝酸铁溶于由硝酸、水、柠檬酸组成的混合溶剂中得到混合溶液；2)将混合溶液搅拌至浓度为0.15～0.2mol/L；3)向基材上滴加钇铁石榴石前躯体形成凝胶膜；4)对凝胶膜进行预退火处理形成籽晶层；6)在籽晶层上再滴加层前驱体溶液；7)后退火处理。