AIRGAPS TO ISOLATE METALLIZATION FEATURES

The present disclosure relates to semiconductor structures and, more particularly, to airgaps which isolate metal lines and methods of manufacture. The structure includes: a plurality of metal lines formed on an insulator layer; and a dielectric material completely filling a space having a first dimension between metal lines of the plurality of metal lines and providing a uniform airgap with a space having a second dimension between metal lines of the plurality of metal lines. The first dimension is larger than the second dimension. 本发明涉及隔离金属化特征的气隙，其揭示内容是有关于半导体结构，更特别的是，有关于隔离金属线的气隙及其制法。该结构包括：多条金属线，其形成于绝缘体层上；以及介电材料，其完全填充在该多条金属线的金属线之间具有第尺寸的空间以及在该多条金属线的金属线之间具有第二尺寸的空间提供均匀气隙。该第尺寸大于该第二尺寸。