Ion implanting machine and use method thereof

Ion implanting machine and use method thereof

The invention relates to an ion implanting machine and a use method thereof. The ion implanting machine comprises an ion source, a loading device, a treatment cavity and a magnetic field device, wherein a straight line between the center of the loading device and the center of the ion source is a ce...

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Hauptverfasser: HONG JILUN, NI MINGMING, WU ZONGYOU, DI TAIPING, LIN ZONGXIAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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creator HONG JILUN
NI MINGMING
WU ZONGYOU
DI TAIPING
LIN ZONGXIAN
description The invention relates to an ion implanting machine and a use method thereof. The ion implanting machine comprises an ion source, a loading device, a treatment cavity and a magnetic field device, wherein a straight line between the center of the loading device and the center of the ion source is a center axis; the treatment cavity is positioned between the ion source and the loading device, and both sides of the treatment cavity are respectively provided with a first opening corresponding to the ion source, and a second opening corresponding to the loading device, and the centers of the first opening and second opening are positioned on the center shaft; the magnetic field device is positioned in the treatment cavity, and comprises a permanent magnet and a coil, and the magnetic field device is used for generating a correction magnetic field vertical to the center shaft. The method has the advantage that the parallel degree of ion beams emitted by the reaction cavity is improved. 种离子植入机及其使用方法，其中离子植入机包括：离子源；装载装
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The ion implanting machine comprises an ion source, a loading device, a treatment cavity and a magnetic field device, wherein a straight line between the center of the loading device and the center of the ion source is a center axis; the treatment cavity is positioned between the ion source and the loading device, and both sides of the treatment cavity are respectively provided with a first opening corresponding to the ion source, and a second opening corresponding to the loading device, and the centers of the first opening and second opening are positioned on the center shaft; the magnetic field device is positioned in the treatment cavity, and comprises a permanent magnet and a coil, and the magnetic field device is used for generating a correction magnetic field vertical to the center shaft. 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The ion implanting machine comprises an ion source, a loading device, a treatment cavity and a magnetic field device, wherein a straight line between the center of the loading device and the center of the ion source is a center axis; the treatment cavity is positioned between the ion source and the loading device, and both sides of the treatment cavity are respectively provided with a first opening corresponding to the ion source, and a second opening corresponding to the loading device, and the centers of the first opening and second opening are positioned on the center shaft; the magnetic field device is positioned in the treatment cavity, and comprises a permanent magnet and a coil, and the magnetic field device is used for generating a correction magnetic field vertical to the center shaft. The method has the advantage that the parallel degree of ion beams emitted by the reaction cavity is improved. 种离子植入机及其使用方法，其中离子植入机包括：离子源；装载装</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
title Ion implanting machine and use method thereof
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