Ion implanting machine and use method thereof
The invention relates to an ion implanting machine and a use method thereof. The ion implanting machine comprises an ion source, a loading device, a treatment cavity and a magnetic field device, wherein a straight line between the center of the loading device and the center of the ion source is a ce...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to an ion implanting machine and a use method thereof. The ion implanting machine comprises an ion source, a loading device, a treatment cavity and a magnetic field device, wherein a straight line between the center of the loading device and the center of the ion source is a center axis; the treatment cavity is positioned between the ion source and the loading device, and both sides of the treatment cavity are respectively provided with a first opening corresponding to the ion source, and a second opening corresponding to the loading device, and the centers of the first opening and second opening are positioned on the center shaft; the magnetic field device is positioned in the treatment cavity, and comprises a permanent magnet and a coil, and the magnetic field device is used for generating a correction magnetic field vertical to the center shaft. The method has the advantage that the parallel degree of ion beams emitted by the reaction cavity is improved.
种离子植入机及其使用方法,其中离子植入机包括:离子源;装载装 |
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