Chemical preparation method for p-type Cu2O nanometer film

The invention discloses a chemical preparation method for a p-type Cu2O nanometer film. A chemical compound containing Cu2+ is added into an organic solvent, and a copper precursor solution with the Cu2+ molar ratio being 0.05-0.15 mol/L is prepared; and then the p-type Cu2O nanometer film is obtained by means of spin coating film forming and reactions of low-temperature annealing and high-temperature annealing. The two steps of annealing process that low temperature annealing is performed firstly and then high temperature annealing is performed is adopted, the compactness of the surface of the film is optimized, and it is avoided that because of direct high-temperature annealing, the copper oxide loss is caused. Compared with a traditional physical type vacuum deposition technology, costis low, the process is simple, and the prepared p-type Cu2O nanometer film has good optical and intrinsic p type electrical characteristic, and is used for preparing active devices and transparent devices in real sense. 本发明公开