Semiconductor memory device

The inventive concept relates to a semiconductor storage device. The semiconductor device includes a substrate includes an active region. A bit line structure extends across the active region. A landing pad is disposed on an end portion of the active region. A first spacer is disposed between the bit line structure and the landing pad. A second spacer is disposed between the first spacer and the landing pad. An air spacer is disposed between the first spacer and the second spacer. A capping pattern is disposed between a sidewall of the landing pad and a sidewall of the bit line structure. Thecapping pattern defines a top surface of the air spacer and comprises a metallic material. 本发明构思涉及种半导体存储器件。种半导体器件包括包含有源区域的衬底。位线结构延伸跨过有源区域。着落垫设置在有源区域的端部上。第间隔物设置在位线结构与着落垫之间。第二间隔物设置在第间隔物与着落垫之间。空气间隔物设置在第间隔物与第二间隔物之间。盖图案设置在着落垫的侧壁与位线结构的侧壁之间。盖图案限定空气间隔物的顶表面并包括金属性材料。