Method for preparing ternary chalcopyrite semiconductor crystal CdGeAs2

The invention relates to a method for preparing a ternary chalcopyrite semiconductor crystal CdGeAs2. The method comprises the following steps: firstly, weighing and charging high-purity simple substances Cd, Ge and As in an inert gas glovebox; then, utilizing high-purity Ar gas to wash a growth cru...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NI YOUBAO, WU HAIXIN, CHEN SHIJING, MAO MINGSHENG, WANG ZHENYOU, HUANG CHANGBAO, MA JIAREN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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