Method for preparing ternary chalcopyrite semiconductor crystal CdGeAs2

The invention relates to a method for preparing a ternary chalcopyrite semiconductor crystal CdGeAs2. The method comprises the following steps: firstly, weighing and charging high-purity simple substances Cd, Ge and As in an inert gas glovebox; then, utilizing high-purity Ar gas to wash a growth crucible multiple times on a vacuum exhausting platform; finally, filling with an Ar inert gas with a suitable pressure to suppress volatilization of components; synthesizing raw materials in a single temperature region-like manner; controlling volatile contents of Cd and As by reducing a free space inthe crucible; mechanically shaking melt after completing chemical combination to promote uniformity of the raw materials; directly growing after completing synthesis; using an improved horizontal Bridgman method; making a furnace body and the crucible generate relative displacement by a motor; and gradually condensing the melt to obtain the crystal. The method not only can avoid a problem that the crystals grown by a ver