SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY UNIT

The invention provides a semiconductor device, a method of manufacturing the semiconductor device, and a display unit. The semiconductor device includes a substrate. The semiconductor device further includes a first transistor. The first transistor includes a first semiconductor layer over the substrate, the first semiconductor layer including poly-silicon. The first transistor further includes afirst gate electrode over the first semiconductor layer, the first gate electrode facing the first semiconductor layer. The semiconductor device further includes a second transistor. The second transistor includes a second semiconductor layer over the substrate, the second semiconductor layer including an oxide semiconductor. The second transistor further includes a second gate electrode over thesecond semiconductor layer, the second gate electrode facing the second semiconductor layer. 本技术提供半导体装置、半导体装置的制造方法和显示装置。种半导体装置，其具备：基板；第晶体管，在基板上依次具有包括多晶硅的第半导体层和与第半导体层对向的第栅电极；以及第二晶体管，在基板上依次具有包括氧化物半导体的第二半导体层和与第二半导体层对向的第二栅电极。