Method for reducing indium antimonide single crystal dislocation

Belonging to the technical field of photoelectric materials, the invention relates to a method for reducing indium antimonide single crystal dislocation. The method carries out in situ annealing treatment on indium antimonide single crystals prepared by Czochralski process so as to reduce the indium antimonide single crystal dislocation. Compared with the method of regulating the temperature to reduce dislocation density in the indium antimonide single crystal growth process, the technical scheme adopted by the invention is simple in operation, also the conditions of the annealing treatment process can be easier to regulate, the dislocation density of antimonide single crystals can be significantly reduced, the dislocation density of large size indium antimonide crystals with a diameter ofabout 50mm can be lower than 50/cm , and then large size antimonide single crystals with excellent performance can be obtained. 本发明涉及种降低锑化铟单晶位错的方法，属于光电材料技术领域。本发明所述方法是对采用Czochralski法制备的锑化铟单晶进行原位退火处理，从而降低锑化铟单晶位错。相对于在锑化铟单晶生长过程中