TRENCH MOSFET WITH SELF-ALIGNED BODY CONTACT WITH SPACER

Trench MOSFET with self- aligned body contact with spacer. In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor substrate, and at least two gate trenches formed in the semiconductor substrate. Each of the trenches comprises a gate electrode. The semiconductor device also includes a body contact trench formed in the semiconductor substrate between the gate trenches. The body contact trench has a lower width at the bottom of the body contact trench and an ohmic body contact implant beneath the body contact trench. The horizontal extent of theohmic body contact implant is at least the lower width of the body contact trench. 具有采用间隙壁的自对准体接触的沟槽MOSFET。根据本发明的实施例，种半导体器件包括半导体衬底，以及形成于所述半导体衬底中的至少两个栅极沟槽。所述沟槽中的每个包括栅电极。所述半导体器件还包括形成于所述半导体衬底中所述栅极沟槽之间的体接触沟槽。所述体接触沟槽在所述体接触沟槽的底部具有较低的宽度，以及在所述体接触沟槽之下具有欧姆体接触注入。所述欧姆体接触注入的水平范围至少是所述体接触沟槽的较低的宽度。