MIXER AND VACUUM PROCESSING DEVICE

Provided are: a mixer for evenly mixing a first gas and a second gas; and a vacuum processing device using the mixer. A second cylinder body 12 is arranged in the interior of a first cylinder body 11in a non-contact manner with one another so that a second cylinder opening 46 is located inside the f...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	JINBO YOSUKE, ABE YOICHI, TAMIYA SHINTARO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MIXING, e.g. DISSOLVING, EMULSIFYING, DISPERSING PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	Provided are: a mixer for evenly mixing a first gas and a second gas; and a vacuum processing device using the mixer. A second cylinder body 12 is arranged in the interior of a first cylinder body 11in a non-contact manner with one another so that a second cylinder opening 46 is located inside the first cylinder body 11; an approach run space 48 is formed between a first cylinder opening 45 and the second cylinder opening 46 inside the first cylinder body 11; a second gas is discharged to the approach run space 48 from the second cylinder opening 46; a first gas is discharged to the approachrun space 48 from a gap 47 formed between the first and second cylinder bodies 11, 12; the first and second gases are made to flow into the approach run space 48 in a state where the second gas is wrapped in the first gas, and discharged to the interior of a mixing vessel 10 from the first cylinder opening 45; the first and second gases travel straight through the mixing vessel 10 and collide witha wall surface of the mixi