LED manufacturing method, LED, display screen, and electronic device

The invention relates to a method for manufacturing a GaN-based display screen. A GaN layer grows at a temperature of 350 to 500 DEG C, wherein the air pressure reaches 500 to 700mBar, the V/III is 2000 to 5000, and a growth rate reaches 3 to 15nm/min; an N type GaN layer growth at a temperature of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	XIE RONGHUA, LIU KANGZHONG, QU SHUANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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