LED manufacturing method, LED, display screen, and electronic device

The invention relates to a method for manufacturing a GaN-based display screen. A GaN layer grows at a temperature of 350 to 500 DEG C, wherein the air pressure reaches 500 to 700mBar, the V/III is 2000 to 5000, and a growth rate reaches 3 to 15nm/min; an N type GaN layer growth at a temperature of 450 to 500 DEG C, wherein the air pressure reaches 200 to 400mBar, the V/III is 6000 to 10000, and agrowth rate reaches 0.5 to 8micro/h; a multi-quantum well layer grows at a temperature of 400 to 500 DEG C, wherein the e air pressure reaches 200 to 400mBar, the V/III is 12000 to 30000, and a growth rate reaches 0.5 to 3micro/h; a AlGaN layer grows at a temperature of 400 to 500 DEG C, wherein the air pressure reaches 50 to 300mBar, the V/III is 2000 to 5000, and a growth rate reaches 0.5 to 2mico/h; and a P type GaN layer grows at a temperature of 400 to 500 DEG C, wherein the air pressure reaches 200 to 400mBar, the V/III is 6000 to 10000, and a growth rate reaches 0.5 to 8mico/h. 种制造GaN基显示屏的方法，在350～500度下生长GaN层，气