Semiconductor device and manufacturing method of the same

The present invention relates to a semiconductor device and a manufacturing method of the same. In order to improve reliability of a semiconductor device, the semiconductor device includes a semiconductor chip, a die pad, a plurality of leads, and a sealing portion. The die pad and the leads are made of a metal material mainly containing copper. A plating layer is formed on a top surface of the die pad. The plating layer is formed by a silver plating layer, a gold plating layer, or a platinum plating layer. The semiconductor chip is mounted on the plating layer on the top surface of the die pad via a bonding material. The plating layer is covered by the bonding material not to be in contact with the sealing portion. 本申请涉及半导体器件及其制造方法。为了提高半导体器件的可靠性，半导体器件包括半导体芯片、裸片焊盘、多个引线和密封部分。裸片焊盘和引线由主要包含铜的金属材料制成。镀层形成在裸片焊盘的顶表面上。镀层由银镀层、金镀层或铂镀层形成。半导体芯片经由接合材料安装在裸片焊盘的顶表面上的镀层上。镀层被接合材料覆盖以不与密封部分接触。