Special-shaped low-voltage and high-brightness LED chip

The invention discloses a special-shaped low-voltage and high-brightness LED chip, which includes a sapphire substrate layer, a nucleation layer, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The first semiconductor layer, the light emitting layer and the second semiconductor layer of the LED chip are divided into four areas according to the Chinese character 'tian', namely, the first semiconductor layer, the light emitting layer and the second semiconductor layer in a first area, the first semiconductor layer, the light emitting layer and the second semiconductor layer in a second area, the first semiconductor layer, the light emitting layer and the second semiconductor layer in a third area, and the first semiconductor layer, the light emitting layer and the second semiconductor layer in a fourth area. A first electrode is arranged on the first semiconductor layer in each area. A platform of the second semiconductor layer is etched in the middle of the LED chip. A sec