Method for GaN-HEMT and Si-CMOS monolithic integration

The invention discloses a method for GaN-HEMT and Si-CMOS monolithic integration. The steps are as follows: the surfaces of a Si-CMOS wafer and a temporary slide are washed, and temporary bonding is performed; thinning and polishing are performed on the Si-CMOS substrate; interconnected through hole...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DAI JIAYUN, WU LISHU, KONG YUECHAN, SHEN GUOCE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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