Copper interconnection process method

The invention discloses a copper interconnection process method. The method comprises the following steps that: step 1, Damascene process is adopted form a copper interconnection line on a semiconductor substrate; step 2, the surface of the copper interconnection line is pre-treated, so that copper oxide on the surface of the copper interconnection line is reduced to copper; and step 3, a cover layer is formed. In the step 2, the copper oxide on the surface of the copper interconnection line is converted into the copper, and therefore, the electromobility of the copper interconnection line canbe decreased, and an adhesion force between the copper and the cover layer is improved. With the copper interconnection process method of the invention adopted, the interface characteristic of the copper and the cover layer can be improved, and the electromigration life of a contact hole can be effectively improved. 本发明公开了种铜互连工艺方法，包括如下步骤：步骤、采用大马士革工艺在半导体衬底上形成铜互连线；步骤二、对铜互连线的表面进行预处理将铜互连线表面的氧化铜还原为铜；步骤三、形成覆盖层，通过步骤二中将所述铜互连线表面的