Method for manufacturing nanosecond radiation-proof NPN type bipolar transistor

The invention discloses a method for manufacturing a nanosecond high-speed switch bipolar transistor, and belongs to the field of the design and the manufacture of semiconductor discrete devices. According to the method disclosed by the invention, the post Au-expanding process is adopted. In this way, the reduction of Au solid solubility and the precipitation of Au atoms during the traditional Au-expanding process, caused by the knot-pushing of an emission region after the Au-expanding operation, can be inhibited. The switching speed and the reliability of the nanosecond high-speed switch bipolar transistor are improved. In addition, a composite center introduced in the silicon can be expanded, and the minority carrier lifetime can be shortened. The composite current of a base region is reduced, so that the capability of the nanosecond high-speed switch bipolar transistor in resisting the ELDRS effect is improved. An electrode isolation dielectric layer on the surface of the base region and the surface of the