Nitride semiconductor light-emitting element

Provided is a nitride semiconductor light-emitting element provided with: an n-side layer; a p-side layer; and an active layer having a well layer provided between the n-side layer and the p-side layer, the well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, the barrier layer having an Al content higher than that of the well layer, wherein: an electron block structure layer is present between the active layer and the p-side layer; and the electron block structure layer has a first electron block layer having a band gap greater than that of the barrier layer, a second electron block layer that is provided between the p-side layer and the first electron block layer and that has a band gap greater than that of the barrier layer and smaller than that of the firstelectron block layer, and a neutral layer that is provided between the first electron block layer and the second electron block layer and that has a band gap smaller than that of the second electronblock layer. 本发明的氮化物半导体发光元