Method for producing a diamond electrode and diamond electrode
The invention relates to a method for producing a diamond electrode, which comprises the following steps: a) providing a main body (2) composed of silicon, the dimensions of which are greater than thedimensions of the diamond electrode (22) to be produced, b) etching at least one recess (10) into th...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a method for producing a diamond electrode, which comprises the following steps: a) providing a main body (2) composed of silicon, the dimensions of which are greater than thedimensions of the diamond electrode (22) to be produced, b) etching at least one recess (10) into the surface of the main body (2), c) introducing predetermined breaking points (18) into the main body (2), d) coating the main body (2) with diamond, e) breaking the diamond electrode (22) out of the main body (2) along the predetermined breaking points (18).
本发明涉及种用于制造金刚石电极的方法,所述方法具有以下步骤:a)提供由硅组成的基体2,该基体的尺寸大于要制造的所述金刚石电极22的尺寸,b)将至少个凹部10蚀刻到所述基体2的表面8中,c)将额定断裂部位18引入到所述基体2中,d)向所述基体2覆以金刚石层,e)将所述金刚石电极22从所述基体2中沿着所述额定断裂部位18折断出。 |
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