A n-doped electrically conductive polymeric material

There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phaseelectron affinity (EA) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material. 本发明提供种包含n-掺杂的导电聚合物的材料，该导电聚合物包含：气相电子亲和力(E)为1-3eV的至少个缺电子芳族部分和至少个与所述聚合物或材料中包含的其它聚合物共价结合的抗衡阳离子，该聚合物被n-掺杂至电荷密度为0.1-1电子/缺电子芳族部分，所述聚合物能形成真空功函(WF)为2.5-4.5eV的层，其中材料中包含的所有抗衡阳离子被固定，这样所述聚合物中任何电子都无法明显扩散或迁移出所述聚合物。本发明还提供种制备该材料的方法。