Driving system of GaN power device

The invention relates to a driving system of a GaN power device, which mainly comprises a control circuit 1, a resonant circuit and a lossless buffer circuit 3, wherein the resonant circuit further comprises a turn-on resonant circuit 2 and a turn-off resonant circuit 4, and the driving circuit is enabled to have an ability of providing asymmetrical output through the upper and lower different charging and discharging circuits. The energy stored in a capacitor C is fed back to a power supply through an inductor L in the turn-off process of a switching tube by using a resonant principle, so that the energy is enabled to be effectively utilized. Meanwhile, the lossless buffer circuit is added to slow down the rising speed of voltage, so that the GaN power device is protected to a certain extent, and a problem of high loss of the GaN power device driving circuit is solved. 本发明涉及种GaN功率器件的驱动系统，主要包括有控制电路1、谐振电路以及无损缓冲电路3，谐振电路还包括开通谐振电路2和关断谐振电路4，通过上下两条不同的充放电回路，使得此驱动电路具有提供不对称的输出能力。利用谐振原理在开关管关断过程中通过L将存储在C中的能量反馈到电源中，使能量得到