Single-sided wet method black silicon wafer

The invention relates to a single-sided wet method black silicon wafer which is prepared by using the preparation method of the single-sided wet method black silicon wafer. The preparation method comprises the following steps that multiple silicon wafers are arranged in a way that every two of the silicon wafers are combined, wherein the distance between the two combined silicon wafers is 0.1mm-3mm; double-sided polishing is performed on the silicon wafers by using dynamic reaction so that the silicon wafers after double-sided polishing are obtained; single-sided texturing is performed on thesilicon wafers after double-sided polishing by using wet etching, wherein the reaction process of wet etching stands so that the silicon wafers after single-sided texturing can be obtained; and the silicon wafers of which every two are combined after single-sided texturing are separated so that the single-sided wet method black silicon wafers can be obtained. The silicon wafers are arranged in a way that every two of the