Method of semiconductor integrated circuit fabrication

A method of semiconductor device fabrication includes providing a substrate including a first fin element and a second fin element extending from the substrate. A first layer is formed over the firstand second fin elements, where the first layer includes a gap. A laser anneal process is performed to the substrate to remove the gap in the first layer. An energy applied to the first layer during the laser anneal process is adjusted based on a height of the first layer. The embodiment of the invention relates to the manufacture method of the semiconductor integrated circuit fabrication. 种半导体器件的制造方法包括提供衬底，该衬底包括从衬底延伸的第鳍元件和第二鳍元件。在第鳍元件和第二鳍元件上方形成第层，其中第层包括缝隙。对衬底实施激光退火工艺以去除第层中的缝隙。基于第层的高度来调整在激光退火工艺期间施加到第层的能量。本发明实施例涉及半导体集成电路的制造方法。