Chemical reduction device for silicon wafer
The invention relates to a chemical reduction device for a silicon wafer. The chemical reduction device comprising a box body filled with acid-mixed liquid is characterized in that a horizontal support plate is fixed on the bottom surface of the box body by standing posts; a gas bubbling box is fixe...
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| creator | GONG CHAOGUANG |
| description | The invention relates to a chemical reduction device for a silicon wafer. The chemical reduction device comprising a box body filled with acid-mixed liquid is characterized in that a horizontal support plate is fixed on the bottom surface of the box body by standing posts; a gas bubbling box is fixed below the horizontal support plate; and matrix type bubble through holes communicated with the gasbubbling box are formed in the horizontal support plate. A bracket is arranged above the horizontal support plate; a rotary lifting basket for clamping a silicon wafer is supported on the bracket andis formed by two circular fixed plates and four lifting basket rods arranged between the two circular fixed plates horizontally, wherein the four lifting basket rods are distributed uniformly by using the central lines of the circular fixed plates as symmetric centers; a plurality of radial annular slots are formed uniformly along the length directions of the lifting basket rods; and the radial annular slots of the four l |
| format | Patent |
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The chemical reduction device comprising a box body filled with acid-mixed liquid is characterized in that a horizontal support plate is fixed on the bottom surface of the box body by standing posts; a gas bubbling box is fixed below the horizontal support plate; and matrix type bubble through holes communicated with the gasbubbling box are formed in the horizontal support plate. A bracket is arranged above the horizontal support plate; a rotary lifting basket for clamping a silicon wafer is supported on the bracket andis formed by two circular fixed plates and four lifting basket rods arranged between the two circular fixed plates horizontally, wherein the four lifting basket rods are distributed uniformly by using the central lines of the circular fixed plates as symmetric centers; a plurality of radial annular slots are formed uniformly along the length directions of the lifting basket rods; and the radial annular slots of the four l</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180406&DB=EPODOC&CC=CN&NR=107887292A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180406&DB=EPODOC&CC=CN&NR=107887292A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GONG CHAOGUANG</creatorcontrib><title>Chemical reduction device for silicon wafer</title><description>The invention relates to a chemical reduction device for a silicon wafer. The chemical reduction device comprising a box body filled with acid-mixed liquid is characterized in that a horizontal support plate is fixed on the bottom surface of the box body by standing posts; a gas bubbling box is fixed below the horizontal support plate; and matrix type bubble through holes communicated with the gasbubbling box are formed in the horizontal support plate. A bracket is arranged above the horizontal support plate; a rotary lifting basket for clamping a silicon wafer is supported on the bracket andis formed by two circular fixed plates and four lifting basket rods arranged between the two circular fixed plates horizontally, wherein the four lifting basket rods are distributed uniformly by using the central lines of the circular fixed plates as symmetric centers; a plurality of radial annular slots are formed uniformly along the length directions of the lifting basket rods; and the radial annular slots of the four l</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB2zkjNzUxOzFEoSk0pTS7JzM9TSEkty0xOVUjLL1IozszJTAYKlSempRbxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DA3MLC3MjSyNHY2LUAABbXClq</recordid><startdate>20180406</startdate><enddate>20180406</enddate><creator>GONG CHAOGUANG</creator><scope>EVB</scope></search><sort><creationdate>20180406</creationdate><title>Chemical reduction device for silicon wafer</title><author>GONG CHAOGUANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN107887292A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GONG CHAOGUANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GONG CHAOGUANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chemical reduction device for silicon wafer</title><date>2018-04-06</date><risdate>2018</risdate><abstract>The invention relates to a chemical reduction device for a silicon wafer. The chemical reduction device comprising a box body filled with acid-mixed liquid is characterized in that a horizontal support plate is fixed on the bottom surface of the box body by standing posts; a gas bubbling box is fixed below the horizontal support plate; and matrix type bubble through holes communicated with the gasbubbling box are formed in the horizontal support plate. A bracket is arranged above the horizontal support plate; a rotary lifting basket for clamping a silicon wafer is supported on the bracket andis formed by two circular fixed plates and four lifting basket rods arranged between the two circular fixed plates horizontally, wherein the four lifting basket rods are distributed uniformly by using the central lines of the circular fixed plates as symmetric centers; a plurality of radial annular slots are formed uniformly along the length directions of the lifting basket rods; and the radial annular slots of the four l</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | Chemical reduction device for silicon wafer |
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