Degassing cavity and method and semiconductor treatment device

The invention provides a degassing cavity and method and a semiconductor treatment device. The degassing method comprises the steps that S10, the interior of the degassing cavity is heated to the preset temperature and kept at the preset temperature; and S11, to-be-degassed chips are transferred int...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JIANG BINGXUAN, SHI PU, ZHENG JINGUO, XU YUE, ZHAO MENGXIN, YE HUA, HOU JUE, WANG HOUGONG, JIA QIANG, ZONG LINGBEI, DING PEIJUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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