Degassing cavity and method and semiconductor treatment device

The invention provides a degassing cavity and method and a semiconductor treatment device. The degassing method comprises the steps that S10, the interior of the degassing cavity is heated to the preset temperature and kept at the preset temperature; and S11, to-be-degassed chips are transferred int...

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Bibliographische Detailangaben
Hauptverfasser:	JIANG BINGXUAN, SHI PU, ZHENG JINGUO, XU YUE, ZHAO MENGXIN, YE HUA, HOU JUE, WANG HOUGONG, JIA QIANG, ZONG LINGBEI, DING PEIJUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention provides a degassing cavity and method and a semiconductor treatment device. The degassing method comprises the steps that S10, the interior of the degassing cavity is heated to the preset temperature and kept at the preset temperature; and S11, to-be-degassed chips are transferred into the degassing cavity kept at the preset temperature and taken out after being heated for the set time period, and thus the to-be-degassed chips are degassed. According to the degassing method, the to-be-degassed chips can be transferred in and taken out from the degassing cavity at any time in theheating degassing process, specifically, when the degassing cavity is heated and kept at the preset temperature, any number of the to-be-degassed chips can be transferred into the degassing cavity atany time, and the to-be-degassed chips transferred into the degassing cavity at any time can be taken out from the degassing cavity as long as being heated for the set time period, so that the heating degree of the chips is c