Method for manufacturing phase-change memory

The invention discloses a method for manufacturing a phase-change memory, and the method comprises the steps: (i), forming a dielectric layer on a semiconductor base material, and a conductive contactstructure passing through the dielectric layer; (ii), removing a part of the conductive contact structure, and forming a first gap in the dielectric layer, wherein the remaining part of the conductive contact structure form the bottom of the first gap; (iii), forming a first electrode in the first gap, wherein the first electrode is located on the remaining part of the conductive contact structure, and the remaining space of the first gap defines a second gap; (iv), forming a heating element and a filling structure in the second gap, wherein the heating element extends upwards from the firstelectrode, and the top of the heating element is exposed out of the filling structure; (v), forming a phase-change element and a second electrode on the heating element and the filling structure. 种制造相变化记忆体的方法，包含：(i)在半导体基材上形成介电