Phase-change memory and manufacturing method thereof

The invention discloses a phase-change memory and a manufacturing method thereof. The method for manufacturing the phase-change memory comprises the following steps of: (i) forming a vertical interconnection structure and a first electrode on a semiconductor substrate, wherein the first electrode is arranged on the vertical interconnection structure, and the first electrode is provided with an exposed top surface; (ii) forming a heating element on the first electrode, wherein the heating element comprises a first part in contact with the top surface and a second part transversely configured toextend out of the top surface from the first part; (iii) forming a second part of a phase-change element in contact with the heating element, wherein the projection of the phase-change element on thesemiconductor substrate and the projection of the first electrode on the semiconductor substrate do not overlap; and (iv) forming a second electrode on the phase-change element, wherein the projection of the second electrode