Semiconductor element and manufacture method thereof

The invention discloses a semiconductor element and a manufacture method thereof. The semiconductor element includes a semiconductor body, a first doped region, a second doped region, a gate electrodeand a dielectric layer. The semiconductor body is arranged on a dielectric substrate and is provided with a protruding part, a first part and a second part, wherein the first part and the second partare arranged on two opposite sides of the protruding part respectively. The first doped region is arranged in the top part of the protruding part. The second doped region is arranged in a tail end ofthe first part away from the protruding part. The gate electrode is arranged on the first part and is adjacent to the protruding part. The dielectric layer is arranged between the gate electrode andthe first part and between the gate electrode and the first part. 本发明公开种半导体元件及其制造方法。此半导体元件包括半导体主体、第掺杂区、第二掺杂区、栅极以及介电层。半导体主体配置于介电基底上，且具有突出部分、第部分与第二部分，其中所述第部分与所述第二部分分别配置于所述突出部分的相对两侧。第掺杂区配置于所述突出部分的顶部中。第二掺杂区配置于所述第部分的远离所述突出部分的末端中。栅极配置