Crystal silicon solar cell and preparation method thereof

The invention relates to the solar cell field and particularly relates to a crystal silicon solar cell and a preparation method thereof. The method comprises steps that (1), a crystal silicon emissionjunction is formed at a front surface of a crystal silicon substrate, and an alternate structure for...

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Bibliographische Detailangaben
Hauptverfasser: SUN XIANG, XU HUABI, JIANG ZHANFENG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to the solar cell field and particularly relates to a crystal silicon solar cell and a preparation method thereof. The method comprises steps that (1), a crystal silicon emissionjunction is formed at a front surface of a crystal silicon substrate, and an alternate structure formed by silicide layers containing first silicon quantum dots and a silicide layer, a transparent conductive film and a metal positive electrode are sequentially deposited; and (2), a crystal silicon back field is formed at a back surface of the crystal silicon substrate, and an alternate structureformed by silicide layers containing second silicon quantum dots and a silicide layer, a transparent conductive film and a metal back electrode are sequentially deposited. The method is advantaged inthat a photoproduction current and an open-circuit voltage are effectively enhanced, and the preparation process is simple and easy. 本发明涉及太阳能电池领域,具体公开了种晶体硅太阳能电池及其制备方法,该方法包括:(1)在晶体硅衬底正面形成晶体硅发射结、然后依次沉积含第硅量子点的硅化物层与硅化物层形成的交替结构、透明导电