High-density semiconductor structure

The invention discloses a high-density semiconductor structure, which comprises a substrate, a bit line and a first memory cell group, wherein the bit line is arranged on the substrate and has a firstside and a second side, and the second side and the first side are opposite; the first memory cell group comprises a first transistor, a first capacitor, a second transistor and a second capacitor; the first transistor is arranged on the substrate and has a first terminal and a second terminal; the first terminal is connected with the bit line; the first capacitor is connected with the second terminal of the first transistor; the second transistor is arranged on the substrate and has a third terminal and a fourth terminal; the third terminal is connected with the bit line; the second capacitor is connected with the fourth terminal of the second transistor; and the first capacitor and the second capacitor are separated from the bit line in a direction vertical to the extending direction ofthe bit line; and the fir