Semiconductor and method for manufacturing same

A method and structure for forming a local interconnect, without routing the local interconnect through an overlying metal layer. In various embodiments, a first dielectric layer is formed over a gatestack of at least one device and a second dielectric layer is formed over a contact metal layer of t...

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Bibliographische Detailangaben
Hauptverfasser: LIN YIHSIUNG, CHANG SHANGWEN
Format: Patent
Sprache:chi ; eng
Schlagworte:
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