Composition for forming silica layer, silica layer and electronic device
The invention relates to a composition for forming a silica layer, a silica layer and an electronic device. The composition for forming a silica layer contains a Si-containing polymer satisfying equations 1 and 2 in a 1H-NMR spectrum and a solvent. The definitions of the equations 1 and 2 are the sa...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention relates to a composition for forming a silica layer, a silica layer and an electronic device. The composition for forming a silica layer contains a Si-containing polymer satisfying equations 1 and 2 in a 1H-NMR spectrum and a solvent. The definitions of the equations 1 and 2 are the same as in specific modes of execution. The Si-containing polymer for forming a silica layer accordingto an embodiment has excellent etching resistance, gap filling characteristic and planarization characteristic. By providing the composition containing the Si-containing polymer, the obtained silicalayer can realize excellent etching resistance and planarization characteristic. B/A=0.2~0.4 [Equation 1] (A+B)/C=4.8~12.0 [Equation 2].
种用于形成二氧化硅层的组成物、二氧化硅层和电子装置。用于形成二氧化硅层的组成物包含在H-NMR光谱中满足等式1和2的含硅聚合物以及溶剂。等式1和2的定义与具体实施方式中相同。根据个实施例的用于形成二氧化硅层的含硅聚合物具有极佳耐蚀刻性、间隙填充特征以及平面化特征。通过提供包含其的组成物,所获得的二氧化硅层可实现极佳耐蚀刻性和平面化特征。B/A=0.2到0.4 [等式1](A+B)/C=4.8到12.0 [等式2]。 |
---|