Method for preparation of graphene electrode MoS2 field effect transistor through thermal reduction

The objective of the invention is to provide a method for large-scale preparation of a graphene electrode MoS2 field effect transistor with a high-performance hybrid structure. The method comprises the steps that: MoS2 of CVD growth is directly performed on a SiO2/Si substrate and MoS2 graphical etc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DONG JINYAO, ZENG YUANMING, WEI GUOCHENG, WANG QUAN, WANG JIANGXIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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