Method for preparation of graphene electrode MoS2 field effect transistor through thermal reduction

The objective of the invention is to provide a method for large-scale preparation of a graphene electrode MoS2 field effect transistor with a high-performance hybrid structure. The method comprises the steps that: MoS2 of CVD growth is directly performed on a SiO2/Si substrate and MoS2 graphical etching is performed; a thermal scanning probe technology is employed to directly write a size and a shape of a graphene oxide (GO) graph; and the GO is subjected to spin-coating and thermal reduction to obtain a graphene electrode, so that a large-scale graphene electrode MoS2 field effect transistoris formed. The method employs the thermal scanning probe technology to directly write the shape and the size of the spin-coating GO, the GO after thermal reduction is taken as an electrode, so that performances such as contact resistance and a migration rate of the MoS2 field effect transistor are improved. A single layer of MoS2 has many excellent electrical properties such as a large band gap (1.8eV) and a large switch