Resistive random access memory of oleic acid passivation organic/inorganic hybrid perovskite, and preparation method thereof

The invention provides a resistive random access memory of oleic acid passivation organic/inorganic hybrid perovskite, and a preparation method thereof. The resistive random access memory comprises bottom electrode, a resistive layer, an oleic acid passivation layer, and top electrode from bottom to...

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Bibliographische Detailangaben
Hauptverfasser:	HE YULI, CAI HENGMEI, MA GUOKUN, WANG HAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention provides a resistive random access memory of oleic acid passivation organic/inorganic hybrid perovskite, and a preparation method thereof. The resistive random access memory comprises bottom electrode, a resistive layer, an oleic acid passivation layer, and top electrode from bottom to top in order. FTO is used as the bottom electrode, CH3NH3PbI1 film is used as the resistive layer,Pt, Au and W are used as the top electrode. The resistive random access layer and the top electrode are disposed between the resistive layer and the top electrode. The CH3NH3PbI1 film adopts solutionchemical approach for preparation, and the top electrode adopts magnetron sputtering deposition method for preparation, and the oleic acid passivation layer is formed by coating the CH3NH3PbI1 film with the oleic acid. The invention is advantageous in that the oleic acid undergoes passivation on the surface of the CH3NH3PbI1 film, which blocks the CH3NH3PbI1 film from contacting with water and oxygen in the air, and overco