In-situ MIS gate structure normally-closed GaN-base transistor and preparation method therefor

The invention relates to the field of semiconductor devices, discloses an in-situ MIS gate structure normally-closed GaN-base transistor and a preparation method, and specifically relates to an improvement method for an MIS interface. The device comprises a substrate, an epitaxial layer, a gate medi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIANG ZHIWEN, LI YAO, ZHANG XIAORONG, HUANG XIANGKUI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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