METHOD FOR DOPING SILICON WAFERS

The invention provides a method for doping of silicon wafers (8) using a diffusion oven (1), said diffusion oven (1) having a door (2) for loading and unloading of the silicon wafers (8), an inner volume (6), gas inlets (4) for a reaction gas, a doping gas and a carrier gas and means for modifying the flow rate of said reaction gas, said doping gas and said carrier gas into the interior volume (6)of the diffusion oven (1), said method comprising the steps of loading silicon wafers (8) into the diffusion oven (1), heating the diffusion oven (1) in accordance with a predetermined temperature profile at leastduring a deposition time, letting reaction gas, doping gas and carrier gas flow simultaneously into the inner volume (6) and unloading the doped silicon wafers (8) from the diffusion oven (1), wherein during the deposition time in which reaction gas, doping gas and carrier gas flow simultaneously into the interior volume (6) of the diffusion oven (1), the ratio of the flow rate of reaction gas and flow rate