IMAGE SENSOR AND RELATED FABRICATION METHOD

An image sensor includes a semiconductor substrate with at least one recess disposed on its surface and in the photosensitive area defined on the surface of the semiconductor substrate, a first-conductivity-type doped region disposed in the semiconductor substrate and in the photosensitive area, and a second-conductivity-type doped region disposed on the surface of the first-conductivity-type doped region and on the surface of the recess. A photosensitive device of the image sensor is formed of the first-conductivity-type doped region and the second-conductivity-type doped region. 本发明公开种影像感测器及其制作方法，其中影像感测器包括半导体基底，且半导体基底表面包含至少凹槽设于感光区内，影像感测器另包括第导电型掺杂区设于半导体基底中并位于感光区内、第二导电型掺杂区设于第导电型掺杂区的表面以及凹槽表面，其中第导电型掺杂区与第二导电型掺杂区构成影像感测器的感光元件，且第导电型掺杂区与第二导电型掺杂区具有不同的导电型。